Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

  Kang, T S ^a   Lo, C F ^a   Liu, L ^a   Finch, R ^a   Ren, F ^a   Wang, X T ^a   Douglas, E ^a   Pearton, S J ^a   Hung, S T ^b   Chang, C J ^b  

^a University of Florida   (United States)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTOMERS; ELECTRON MOBILITY; FLIP CHIP DEVICES; GALLIUM NITRIDE; SILICON CARBIDE; SILICONES; TRANSISTORS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALN SUBSTRATES; FINITE ELEMENT SIMULATIONS; FLIP-CHIP BONDING; LASER LIFT-OFF; MAXIMUM TEMPERATURE; POWER DENSITIES; POWER LEVELS; POWER SWITCHES; SAPPHIRE SUBSTRATES; SILICONE ELASTOMERS; STEADY-STATE TEMPERATURE; TEMPERATURE RISE; THERMAL RESPONSE; THERMAL SIMULATIONS; TRANSIT TIME;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80051869141     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3605298     Document Type: Article

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