The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO 2

Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 7, 2011, Pages 872-875

  Yildiz, A ^a   Alsac A A ^b   Serin, T ^b   Serin, N ^b  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b ANKARA UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC PARAMETER; CONDUCTION MODELS; DONOR CONCENTRATIONS; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MECHANISMS; EXPERIMENTAL EVIDENCE; GRAIN BARRIER; HIGH TEMPERATURE; HOPPING CONDUCTION; LOW TEMPERATURES; NEAREST-NEIGHBORS;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; GRAIN SIZE AND SHAPE; X RAY DIFFRACTION;

GRAIN BOUNDARIES;

EID: 80051667176     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-010-0228-2     Document Type: Article

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