|
Volumn 12, Issue 11, 2011, Pages 1794-1799
|
Analysis and modelling of lateral heterostructure field-effect bipolar transistors
|
Author keywords
LH FEBT; Light emitting transistor; OFET; Zinc oxide
|
Indexed keywords
DISPLAY DEVICES;
EQUIVALENT CIRCUITS;
FIELD EFFECT TRANSISTORS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
II-VI SEMICONDUCTORS;
LIGHT EMISSION;
MAGNETIC SEMICONDUCTORS;
ORGANIC FIELD EFFECT TRANSISTORS;
PHOTOTRANSISTORS;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
THIN FILM TRANSISTORS;
THRESHOLD VOLTAGE;
WIDE BAND GAP SEMICONDUCTORS;
ZINC OXIDE;
ANALYSIS AND MODELLING;
CURRENT VOLTAGE CURVE;
LH-FEBT;
LIGHT-EMITTING TRANSISTORS;
N-TYPE SEMICONDUCTORS;
RESEARCH COMMUNITIES;
SEMICONDUCTOR PROPERTIES;
TRANSFER CHARACTERISTICS;
HETEROJUNCTIONS;
|
EID: 80051616005
PISSN: 15661199
EISSN: None
Source Type: Journal
DOI: 10.1016/j.orgel.2011.06.026 Document Type: Article |
Times cited : (2)
|
References (15)
|