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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Origin of the high p-doping in F intercalated graphene on SiC

(4) Cheng, Y C a Kaloni, T P a Huang, G S b Schwingenschlgl, U a

a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

b FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; P-DOPING; SI DANGLING BONDS;

ATOMS; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; DANGLING BONDS; ELECTRONIC STRUCTURE; FLUORINATION; GRAPHENE; HALOGENATION; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

FLUORINE;

EID: 80051583435 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3623484 Document Type: Article

Times cited : (30)

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