Characterization of the PSG/Si interface of H3PO4 doping process for solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 11, 2011, Pages 3099-3105

  Armigliato, A ^a   Nobili, D ^a   Solmi, S ^a   Blendin, G ^b   Schum, B ^b   Lachowicz, A ^b   Horzel, J ^c  

^a CNR   (Italy)

^b SCHOTT Solar AG   (Germany)

^c IMEC   (Belgium)

Author keywords

Emitter; Precipitation; Solar cells; Spray deposition

Indexed keywords

CLUSTERING PHENOMENA; CONCENTRATION PROFILES; DEFECT LAYERS; DOPED SILICON; DOPING PROCESS; ELECTRICAL MEASUREMENT; EMITTER; FORMER PROCESS; HABIT PLANE; MICRO-STRUCTURAL; PHOSPHOROUS SILICATE GLASS; SI SURFACES; SILICON SURFACES; SOLAR-CELL APPLICATIONS; SPRAY DEPOSITION; SPRAY TECHNIQUE; TEM OBSERVATIONS; X-RAY MICROANALYSIS;

CRYSTAL ORIENTATION; DEFECTS; DOPING (ADDITIVES); INTERNET PROTOCOLS; PHOSPHORUS; SILICATES; SILICON OXIDES; TEXTURING;

PRECIPITATION (CHEMICAL);

EID: 80051551630     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.06.042     Document Type: Article

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