SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 9, 2011, Pages 2837-2839

Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

(3) Lee, W K a Wong, H Y a Aw, K C b

a MULTIMEDIA UNIVERSITY (Malaysia)

b UNIVERSITY OF AUCKLAND (New Zealand)

Author keywords

Non volatile memory; Polymethylsilsesquioxane; Zinc oxide nanoparticles

Indexed keywords

ALUMINIUM ELECTRODE; CHARGE TRANSPORT MECHANISMS; COATED GLASS; CURRENT MECHANISMS; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM TUNNELING; MEMORY DEVICE; NON-VOLATILE MEMORIES; POLYMETHYLSILSESQUIOXANE; ZINC OXIDE NANOPARTICLES; ZNO;

ALUMINUM; ITO GLASS; NANOPARTICLES; ZINC; ZINC OXIDE;

FLASH MEMORY;

EID: 80051550260 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.04.027 Document Type: Article

Times cited : (11)

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