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Volumn 59, Issue 21, 2011, Pages 466-469

Device characteristics of a Ge-doped SbTe alloy for high-speed phase-change random access memory

Author keywords

Confined structure; CVD; Ge doped Sb rich telluride (Ge ST); PCRAM

Indexed keywords


EID: 79961239593     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.59.466     Document Type: Article
Times cited : (9)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.