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Volumn 59, Issue 21, 2011, Pages 466-469
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Device characteristics of a Ge-doped SbTe alloy for high-speed phase-change random access memory
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Author keywords
Confined structure; CVD; Ge doped Sb rich telluride (Ge ST); PCRAM
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Indexed keywords
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EID: 79961239593
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: 10.3938/jkps.59.466 Document Type: Article |
Times cited : (9)
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References (11)
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