Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Sagar, Adarsh ^a   Balasubramanian, Kannan ^a   Burghard, Marko ^a   Kern, Klaus ^a,b   Sordan, Roman ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b EPFL   (Switzerland)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; AMBIENT CONDITIONS; AMBIPOLAR; BI-LAYER; DIGITAL PHASE DETECTION; DIGITAL SIGNALS; ELECTROCHEMICAL GATES; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; PHASE DIFFERENCE; SOLID POLYMER ELECTROLYTES; TRANSFER CHARACTERISTICS; VOLTAGE GAIN;

ELECTROLYTES;

GRAPHENE;

EID: 79961094084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615247     Document Type: Article

References (20)

1. X. Wang, X. Li, L. Zhang, Y. Yoon, P. K. Weber, H. Wang, J. Guo, and H. Dai, Science 324, 768 (2009). 10.1126/science.1170335
2. X. Dong, D. Fu, W. Fang, Y. Shi, P. Chen, and L.-J. Li, Small 5, 1422 (2009). 10.1002/smll.200801711
3. R. Sordan, F. Traversi, and V. Russo, Appl. Phys. Lett. 94, 073305 (2009). 10.1063/1.3079663
4. F. Traversi, V. Russo, and R. Sordan, Appl. Phys. Lett. 94, 223312 (2009). 10.1063/1.3148342
5. E. U. Stützel, M. Burghard, K. Kern, F. Traversi, F. Nichele, and R. Sordan, Small 6, 2822 (2010). 10.1002/smll.201000854
6. N. Harada, K. Yagi, S. Sato, and N. Yokoyama, Appl. Phys. Lett. 96, 012102 (2010). 10.1063/1.3280042
7. H. Wang, D. Nezich, J. Kong, and T. Palacios, IEEE Electron Device Lett. 30, 547 (2009). 10.1109/LED.2009.2016443
8. D. H. Wolaver, Phase-Locked Loop Circuit Design (Prentice Hall, Upper Saddle River, 1991).
9. R. Sordan, K. Balasubramanian, M. Burghard, and K. Kern, Appl. Phys. Lett. 88, 053119 (2006). 10.1063/1.2171474 (Pubitemid 43190914)
10. H. Schmidt, T. Lüdtke, P. Barthold, E. McCann, V. I. Fal'ko, and R. J. Haug, Appl. Phys. Lett. 93, 172108 (2008). 10.1063/1.3012369
11. A. Sagar, E. J. H. Lee, K. Balasubramanian, M. Burghard, and K. Kern, Nano Lett. 9, 3124 (2009). 10.1021/nl9012002
12. A. Pachoud, M. Jaiswal, P. K. Ang, K. P. Loh, and B. Üzyilmaz, EPL 92, 27001 (2010). 10.1209/0295-5075/92/27001
13. D. K. Efetov and P. Kim, Phys. Rev. Lett. 105, 256805 (2010). 10.1103/PhysRevLett.105.256805
14. S.-L. Li, H. Miyazaki, A. Kumatani, A. Kanda, and K. Tsukagoshi, Nano Lett. 10, 2357 (2010). 10.1021/nl100031x
15. S.-L. Li, H. Miyazaki, H. Hiura, C. Liu, and K. Tsukagoshi, ACS Nano 5, 500 (2011). 10.1021/nn102346b
16. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
17. See supplementary material at http://dx.doi.org/10.1063/1.3615247 E-APPLAB-99-020130 for Raman spectrum of the misoriented bilayer graphene and voltage gain of electrochemically gated bilayer graphene transistors in a complementary inverter configuration.
18. P. Poncharal, A. Ayari, T. Michel, and J.-L. Sauvajol, Phys. Rev. B 78, 113407 (2008). 10.1103/PhysRevB.78.113407
19. K. Balasubramanian, E. J. H. Lee, R. T. Weitz, M. Burghard, and K. Kern, Phys. Status Solidi A 205, 633 (2008). 10.1002/pssa.200723410
20. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy, A. K. Geim, A. C. Ferrari, and A. K. Sood, Nature Nanotech. 3, 210 (2008). 10.1038/nnano.2008.67 (Pubitemid 351499403)