Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

Optics Express

Volumn 19, Issue 16, 2011, Pages 15149-15154

  Cheng, James ^a   You, Sifang ^b   Rahman, Samia ^a   Lo, Yu Hwa ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; DETECTORS; PARTICLE BEAMS; ZINC;

DARK COUNT RATE; DARK COUNTS; DETECTION EFFICIENCY; GEIGER MODES; HIGH-FIELD REGIONS; INGAAS/INP; P-I-N JUNCTIONS; SELF-QUENCHING; SIGNAL NOISE; SINGLE PHOTON AVALANCHE DETECTORS; SINGLE-PHOTON DETECTION EFFICIENCIES; ZINC DIFFUSION;

PHOTONS;

EID: 79961069543     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.015149     Document Type: Article

References (10)

1. G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, "Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes," J. Mod. Opt. 51, 1381 (2004).
2. A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, "Single photon counting at telecom wavelength and quantum key distribution," J. Mod. Opt. 51, 1399 (2004).
3. K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, "InGaAs single photon avalanche detector with ultralow excess noise," Appl. Phys. Lett. 91 (8), 081107 (2007).
4. K. Zhao, S. You, J. Cheng, and Y.-H. Lo, "Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector," Appl. Phys. Lett. 93 (15), 153504 (2008).
5. J. Cheng, S. You, K. Zhao, and Y.-H. Lo, "Self-quenched InGaAs single-photon detector," Proc. SPIE 7320 (732010), 732010, 732010-9 (2009).
6. H. Sudo and M. Suzuki, "Surface degradation mechanism of InP/InGaAs APDs," J. Lightwave Technol. 6 (10), 1496-1501 (1988).
7. Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, "A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction," J. Lightwave Technol. 10 (2), 182-193 (1992).
8. G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, "Buried-mesa avalanche photodiodes," IEEE J. Quantum Electron. 34 (12), 2321-2326 (1998).
9. M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, "Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts," Thin Solid Films 514 (1-2), 250-253 (2006). (Pubitemid 44040941)
10. S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, "Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode," IEEE Photon. Technol. Lett. 12 (5), 534-536 (2000).