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Materials Letters

Volumn 65, Issue 21-22, 2011, Pages 3275-3277

Influence of SnO2 coating and annealing on the luminescence properties of porous silicon nanowires

(5) Jin, Changhyun a Kim, Hyunsu a Hong, Chanseok a Park, Sunghoon a Lee, Chongmu a

a Inha University (South Korea)

Author keywords

Annealing; Luminescence; Nanowires; Porous materials; SnO2

Indexed keywords

ANNEALING PROCESS; BLUE-GREEN EMISSIONS; ELECTROCHEMICAL ANODIZATIONS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; INTERSTITIALS; LUMINESCENCE PROPERTIES; OXIDIZING ATMOSPHERE; PHOTOLUMINESCENCE SPECTRUM; PL MEASUREMENTS; REDUCING ATMOSPHERE; SILICON NANOWIRES; SNO2; THERMAL-ANNEALING; TWO-STEP PROCESS;

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; COATINGS; DISSOCIATION; ENERGY DISPERSIVE SPECTROSCOPY; LUMINESCENCE; NANOWIRES; POROUS MATERIALS; TIN;

POROUS SILICON;

EID: 79961015413 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2011.07.040 Document Type: Article

Times cited : (4)

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