The configuration and evolution of Ti-Si-N island on TiN(001) surface: Ab initio study

Advanced Materials Research

Volumn 295-297, Issue , 2011, Pages 301-306

  Liu, Xuejie ^a   Zhao, Lingling ^a   Ren, Yuan ^a   Westkaemper, Engelbert ^b   Tan, Xin ^a   Jia, Huiling ^a  

^a INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Ab initio; Activation energy; Configuration evolution; Film growth; Ti Si N

Indexed keywords

AB INITIO; AB INITIO STUDY; ABSORPTION ENERGIES; CONFIGURATION EVOLUTION; FIRST PRINCIPLE METHOD; GROWTH PROCESS; NITROGEN ATOM; SI ATOMS; SILICON ATOMS; STABLE CONFIGURATION; TI ATOMS; TI-SI-N; TITANIUM ATOMS; TOTAL ENERGY;

ACTIVATION ENERGY; ATOMS; FILM GROWTH; MANUFACTURE; METALLIC FILMS; TITANIUM; TITANIUM NITRIDE;

SILICON;

EID: 79960760195     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.295-297.301     Document Type: Conference Paper

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