Gold catalyst initiated growth of GaN nanowires by MOCVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2315-2317

  Ahl, J P ^a,b   Behmenburg, H ^a,b   Giesen, C ^a   Regolin, I ^c   Prost, W ^c   Tegude, F J ^c   Radnoczi, G Z ^d   Pecz B ^d   Kalisch, H ^b   Jansen, R H ^b   Heuken, M ^a,b  

^a AIXTRON AG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

^d RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Au catalyst; GaN; MOCVD; Nanowire; VLS

Indexed keywords

AU CATALYSTS; CATALYST MATERIAL; DROPLET DIAMETERS; GAN; GAN NANOWIRES; GOLD CATALYSTS; GROWTH OF GAN; HIGH DENSITY; PRESSURE AND TEMPERATURE; PROCESS PARAMETERS; REACTOR PRESSURES; SAPPHIRE SUBSTRATES; SELECTIVE GROWTH; SINGLE-CRYSTALLINE; TEMPERATURE WINDOW; THREADING DISLOCATION; V/III RATIO; VAPOUR-LIQUID-SOLID MECHANISMS; VLS;

CATALYSTS; CHEMICAL ANALYSIS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; GOLD; MORPHOLOGY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 79960720539     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000992     Document Type: Article

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