A very promising piezoelectric property of Ta2O5 thin films. I: Monoclinic-trigonal phase transition

Journal of Solid State Chemistry

Volumn 184, Issue 8, 2011, Pages 2023-2032

  Audier, M ^a   Chenevier, B ^a   Roussel, H ^a   Vincent, L ^b   Pena A ^c   Lintanf Salaun A ^d  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b MINATEC   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d CEA LETI   (France)

Author keywords

Ceramic thin film; Phase transition; Tantalum oxide; Transmission electron microscopy; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; BINDING ENERGY; CERAMIC MATERIALS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLOGRAPHY; ELECTRIC DIPOLE MOMENTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE FILMS; PHASE TRANSITIONS; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; SILICON WAFERS; SINGLE CRYSTALS; TANTALUM DEPOSITS; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CERAMIC THIN FILMS; CHEMICAL VAPOR DECOMPOSITION; ELECTROSTATIC SPRAY DEPOSITION; HIGH-RESOLUTION TEM; INCOMMENSURATE PHASE; MONOCLINIC STRUCTURES; PIEZOELECTRIC PROPERTY; TRIGONAL STRUCTURES;

THIN FILMS;

EID: 79960697777     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2011.06.001     Document Type: Article

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