Direct imaging of two-state dynamics on the amorphous silicon surface

Physical Review Letters

Volumn 106, Issue 23, 2011, Pages

  Ashtekar, S ^a   Scott, G ^a   Lyding, J ^a,b   Gruebele, M ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION FREE ENERGY; AMORPHOUS SI; AVERAGE DIAMETER; CLUSTER SIZES; DIRECT IMAGING; GLASS MODELS; SI CLUSTERS; SURFACE CRYSTALLINITY; SURFACE PREPARATION; TWO-STATE DYNAMICS; VAPOR GROWTH;

ACTIVATION ENERGY; GLASS; ION BOMBARDMENT; METALLIC GLASS; SURFACES;

AMORPHOUS SILICON;

EID: 79960643508     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.106.235501     Document Type: Article

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