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Applied Physics Letters

Volumn 98, Issue 24, 2011, Pages

Nitrogen assisted etching of graphene layers in a scanning electron microscope

(6) Fox, D a O'Neill, A a Zhou, D a Boese, M a Coleman, J N a Zhang, H Z a

a TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM CURRENTS; ETCHING MECHANISM; ETCHING PROCESS; FOCUSED ELECTRON BEAMS; GAS PRESSURES; GRAPHENE LAYERS; LOW ENERGIES; MICROSTRUCTURE MODIFICATIONS; NITROGEN GAS; PLASMON ENERGY; SCANNING ELECTRON MICROSCOPE;

ELECTRON BEAMS; ELECTRON MICROSCOPES; ELECTRONS; ENERGY DISSIPATION; ETCHING; GRAPHENE; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN;

EID: 79960617196 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601467 Document Type: Article

Times cited : (61)

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