Conductivity engineering of graphene by defect formation

Journal of Physics D: Applied Physics

Volumn 43, Issue 4, 2010, Pages

  Jafri, S H M ^a   Carva, K ^a,b   Widenkvist, E ^a   Blom, T ^a   Sanyal, B ^b   Fransson, J ^b   Eriksson, O ^b   Jansson, U ^a   Grennberg, H ^c   Karis, O ^b   Quinlan, R A ^d   Holloway, B C ^e   Leifer, K ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b CHARLES UNIVERSITY   (Czech Republic)

^c UPPSALA UNIVERSITY   (Sweden)

^d The College of William and Mary   (United States)

^e LUNA INNOVATIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; DEFECT FORMATION; ELECTRONIC JUNCTIONS; ELECTRONICS APPLICATIONS; ELECTRONICS DEVICES; EXPERIMENTAL STUDIES; GAP STATE; GRAPHENES; METALLIC BEHAVIOUR; ORDER OF MAGNITUDE; QUANTUM MECHANICAL; TRANSPORT CALCULATION; TRANSPORT MEASUREMENTS; VACANCY DEFECTS;

ADSORPTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GRAPHENE; GRAPHITE; QUANTUM CHEMISTRY; QUANTUM THEORY; VACANCIES;

DEFECTS;

EID: 74949087242     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/4/045404     Document Type: Article

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