-
1
-
-
0025512595
-
Rigorous thermodynamic treatment of the heat generation and conduction in semiconductor device modeling
-
Wachutka, G. K.: Rigorous thermodynamic treatment of the heat generation and conduction in semiconductor device modeling. IEEE Trans. Electron Devices 9, 1141-1149 (1990).
-
(1990)
IEEE Trans. Electron Devices
, vol.9
, pp. 1141-1149
-
-
Wachutka, G.K.1
-
4
-
-
74849134479
-
Anharmonic decay of non-equilibrium intervalley phonons in silicon
-
Aksamija, Z., Ravaioli, U.: Anharmonic decay of non-equilibrium intervalley phonons in silicon. J. Phys. Conf. Ser. 193, 012033 (2009).
-
(2009)
J. Phys. Conf. Ser.
, vol.193
, pp. 012033
-
-
Aksamija, Z.1
Ravaioli, U.2
-
5
-
-
47649085966
-
Transport Equations for Semiconductors
-
Berlin: Springer
-
Jüngel, A.: Transport Equations for Semiconductors. Lecture Notes in Physics, vol. 773. Springer, Berlin (2009).
-
(2009)
Lecture Notes in Physics
, vol.773
-
-
Jüngel, A.1
-
6
-
-
0030537690
-
On a hierarchy of macroscopic models for semiconductors
-
Abdallah, N. Ben, Degond, P.: On a hierarchy of macroscopic models for semiconductors. J. Math. Phys., 37(7), 3306-3333 (1996).
-
(1996)
J. Math. Phys.
, vol.37
, Issue.7
, pp. 3306-3333
-
-
Abdallah, N.B.1
Degond, P.2
-
7
-
-
0035690629
-
Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle
-
Muscato, O., Romano, V.: Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the maximum entropy principle. VLSI DESIGN 13, 273-279 (2001).
-
(2001)
VLSI DESIGN
, vol.13
, pp. 273-279
-
-
Muscato, O.1
Romano, V.2
-
8
-
-
18144366409
-
Simulation of Gunn oscillations with a non-parabolic hydrodynamical model based on the Maximum Entropy Principle
-
Mascali, G., Romano, V.: Simulation of Gunn oscillations with a non-parabolic hydrodynamical model based on the Maximum Entropy Principle. Compel, 24(1), 35-54 (2005).
-
(2005)
Compel
, vol.24
, Issue.1
, pp. 35-54
-
-
Mascali, G.1
Romano, V.2
-
9
-
-
24144478535
-
MEP parabolic hydrodynamical model for holes in silicon semiconductors
-
Mascali, G., Romano, V., Sellier, J. M.: MEP parabolic hydrodynamical model for holes in silicon semiconductors. Nuovo Cimento B, 120(2), 197-215 (2005).
-
(2005)
Nuovo Cimento B
, vol.120
, Issue.2
, pp. 197-215
-
-
Mascali, G.1
Romano, V.2
Sellier, J.M.3
-
10
-
-
68349124961
-
Exact maximum entropy closure of the hydrodynamical model for Si semiconductors: the 8-moment case
-
La Rosa, S., Mascali, G., Romano, V.: Exact maximum entropy closure of the hydrodynamical model for Si semiconductors: the 8-moment case. SIAM J. Appl. Math. 70, 710 (2009).
-
(2009)
SIAM J. Appl. Math.
, vol.70
, pp. 710
-
-
la Rosa, S.1
Mascali, G.2
Romano, V.3
-
11
-
-
77958484212
-
A hydrodynamic model for hole transport in silicon semiconductors: the case of warped non-parabolic bands
-
Mascali, G., Romano, V.: A hydrodynamic model for hole transport in silicon semiconductors: the case of warped non-parabolic bands. Math. Comput. Model. 53, 213-229 (2011).
-
(2011)
Math. Comput. Model.
, vol.53
, pp. 213-229
-
-
Mascali, G.1
Romano, V.2
-
12
-
-
0030186891
-
An energy-transport model for semiconductors derived from the Boltzmann equation
-
Abdallah, N. Ben, Degond, P., Génieys, S.: An energy-transport model for semiconductors derived from the Boltzmann equation. J. Stat. Phys. 84, 205-231 (1996).
-
(1996)
J. Stat. Phys.
, vol.84
, pp. 205-231
-
-
Abdallah, N.B.1
Degond, P.2
Génieys, S.3
-
13
-
-
77951184785
-
Energy transport in semiconductor devices
-
Jüngel, A.: Energy transport in semiconductor devices. Math. Comput. Model. Dyn. Syst. 16, 1-22 (2010).
-
(2010)
Math. Comput. Model. Dyn. Syst.
, vol.16
, pp. 1-22
-
-
Jüngel, A.1
-
18
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
-
Jacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55, 645-705 (1983).
-
(1983)
Rev. Mod. Phys.
, vol.55
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
19
-
-
0033438601
-
Nonparabolic band transport in semiconductors: closure of the moment equations
-
Anile, A. M., Romano, V.: Nonparabolic band transport in semiconductors: closure of the moment equations. Contin. Mech. Thermodyn. 11, 307-325 (1999).
-
(1999)
Contin. Mech. Thermodyn.
, vol.11
, pp. 307-325
-
-
Anile, A.M.1
Romano, V.2
-
20
-
-
58149265443
-
Modeling heat generation in a submicrometric n+-n-n+ silicon diode
-
Muscato, O., Di Stefano, V.: Modeling heat generation in a submicrometric n+-n-n+ silicon diode. J. Appl. Phys. 104, 124501 (2008).
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 124501
-
-
Muscato, O.1
Di Stefano, V.2
-
21
-
-
33748548036
-
Partial moment entropy approximation to radiative heat transfer
-
Frank, M., Dubroca, B., Klar, A.: Partial moment entropy approximation to radiative heat transfer. J. Comput. Phys. 218, 1-18 (2006).
-
(2006)
J. Comput. Phys.
, vol.218
, pp. 1-18
-
-
Frank, M.1
Dubroca, B.2
Klar, A.3
-
23
-
-
51249168226
-
Symmetric conservative form of low-temperature phonon gas hydrodynamics
-
Larecki, W.: Symmetric conservative form of low-temperature phonon gas hydrodynamics. Nuovo Cimento D 14(2), 141-176 (1992).
-
(1992)
Nuovo Cimento D
, vol.14
, Issue.2
, pp. 141-176
-
-
Larecki, W.1
-
24
-
-
25444486980
-
Nine-momentum phonon hydrodynamics based on the maximum-entropy closure: one-dimensional flow
-
Banach, Z., Larecki, W.: Nine-momentum phonon hydrodynamics based on the maximum-entropy closure: one-dimensional flow. J. Phys. A 38, 8781-8802 (2005).
-
(2005)
J. Phys. A
, vol.38
, pp. 8781-8802
-
-
Banach, Z.1
Larecki, W.2
-
25
-
-
78649558670
-
Consistency of the phenomenological theories of wave-type heat transport with the hydrodynamics of a phonon gas
-
Larecki, W., Banach, Z.: Consistency of the phenomenological theories of wave-type heat transport with the hydrodynamics of a phonon gas. J. Phys. A, Math. Theor. 43, 385501 (2010).
-
(2010)
J. Phys. A, Math. Theor.
, vol.43
, pp. 385501
-
-
Larecki, W.1
Banach, Z.2
-
28
-
-
4143081524
-
-
Debernardi, A., Baroni, S., Molinari, E.: Phys. Rev. Lett. 75(9), 1819-1822 (1995).
-
(1995)
Phys. Rev. Lett.
, vol.75
, Issue.9
, pp. 1819-1822
-
-
Debernardi, A.1
Baroni, S.2
Molinari, E.3
-
29
-
-
0000783469
-
Temperature dependence of first-order Raman scattering by phonons in Si, Ge, and α-Sn: anharmonic effects
-
Manendez, J., Cardona, M.: Temperature dependence of first-order Raman scattering by phonons in Si, Ge, and α-Sn: anharmonic effects. Phys. Rev. B 29, 2051-2059 (1984).
-
(1984)
Phys. Rev. B
, vol.29
, pp. 2051-2059
-
-
Manendez, J.1
Cardona, M.2
-
30
-
-
0001187605
-
Concurrent thermal and electrical modeling of sub-micrometric silicon devices
-
Lai, J., Majumdar, A.: Concurrent thermal and electrical modeling of sub-micrometric silicon devices. J. Appl. Phys. 79, 7353-7361 (1996).
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 7353-7361
-
-
Lai, J.1
Majumdar, A.2
-
31
-
-
36149027857
-
Analysis of lattice thermal conductivity
-
Holland, M. G.: Analysis of lattice thermal conductivity. Phys. Rev. 132(6), 2461-2471 (1963).
-
(1963)
Phys. Rev.
, vol.132
, Issue.6
, pp. 2461-2471
-
-
Holland, M.G.1
-
32
-
-
0001246055
-
Phonon scattering in silicon films with thickness of order 100 nm
-
Ju, Y. S., Goodson, K. E.: Phonon scattering in silicon films with thickness of order 100 nm. Appl. Phys. Lett., 74(20), 3005-3007 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.20
, pp. 3005-3007
-
-
Ju, Y.S.1
Goodson, K.E.2
-
33
-
-
33845692228
-
Heat generation and transport in nanometer scale transistors
-
Pop, E., Sinha, S., Goodson, K.: Heat generation and transport in nanometer scale transistors. Proc. IEEE 94(8), 1587-1601 (2006).
-
(2006)
Proc. IEEE
, vol.94
, Issue.8
, pp. 1587-1601
-
-
Pop, E.1
Sinha, S.2
Goodson, K.3
-
34
-
-
79952023134
-
Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors
-
N. Manganaro (Ed.), Singapore: World Scientific
-
Muscato, O., Di Stefano, V., Milazzo, C.: Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors. In: N. Manganaro et al. (eds.) Proceedings WASCOM 2007, World Scientific, Singapore (2008).
-
(2008)
Proceedings WASCOM 2007
-
-
Muscato, O.1
Di Stefano, V.2
Milazzo, C.3
-
35
-
-
0003225199
-
Heat generation in semiconductor devices
-
Lindefelt, U.: Heat generation in semiconductor devices. J. Appl. Phys. 75(2), 942-957 (1994).
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.2
, pp. 942-957
-
-
Lindefelt, U.1
-
36
-
-
0020087475
-
Electron and hole mobilities in Silicon as a function of concentration and temperature
-
Arora, N. D., Hauser, J. R., Roulston, D. J.: Electron and hole mobilities in Silicon as a function of concentration and temperature. IEEE Trans. Electron Devices, 29(2), 292-295 (1982).
-
(1982)
IEEE Trans. Electron Devices
, vol.29
, Issue.2
, pp. 292-295
-
-
Arora, N.D.1
Hauser, J.R.2
Roulston, D.J.3
|