Evaluation of monolithic Silicon-on-Insulator pixel devices thinned to 100 m

IEEE Nuclear Science Symposium Conference Record

Volumn , Issue , 2010, Pages 646-649

  Shinsho, K ^a   Hara, K ^a   Arai, Y ^b   Ikemoto, Y ^b   Kohriki, T ^b   Miyoshi, T ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSIDE ILLUMINATION; EXCELLENT PERFORMANCE; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; MONOLITHIC PIXELS; PROCESS TECHNOLOGIES; RED LASER LIGHT; SILICON ON INSULATOR; SOI SENSORS; THINNING PROCESS;

GAMMA RAYS; MEDICAL IMAGING; NUCLEAR PHYSICS; PIXELS; SEMICONDUCTOR DEVICES; SILICON DETECTORS; SILICON WAFERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 79960329739     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2010.5873838     Document Type: Conference Paper

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