Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Verma, V B ^a   Stevens, Martin J ^a   Silverman, K L ^a   Dias, N L ^b   Garg, A ^b   Coleman, J J ^b   Mirin, R P ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CARRIER CAPTURE; CHEMICAL VAPOR; DECAY TIME; DEFECT STATE; GAAS BARRIERS; METAL-ORGANIC; PATTERNED QUANTUM DOT; RADIATIVE RELAXATION; RISETIMES; SYSTEMATIC INVESTIGATIONS; TIME-RESOLVED PHOTOLUMINESCENCE;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; WET ETCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960190522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3599889     Document Type: Article

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