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Volumn 109, Issue 12, 2011, Pages

Interlayer exchange coupling in GaN-based diluted magnetic semiconductor multilayers studied by first-principles calculations

(4) Luo, M a Tang, Z a Zhu, Z Q a Chu, J H a

a EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; DENSITY OF STATE; DEVICE APPLICATION; DILUTED MAGNETIC SEMICONDUCTORS; FIRST-PRINCIPLES CALCULATION; HOLE-DOPING; INTERLAYER EXCHANGE COUPLING; MAGNETIC INTERACTIONS; MAGNETIC LAYERS; MG-DOPED; MG-DOPING; NON-DOPED; NONMAGNETIC SPACER; SERIES MODEL; SPACER THICKNESS;

ANTIFERROMAGNETISM; CALCULATIONS; DIAMONDS; EXCHANGE COUPLING; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC SEMICONDUCTORS; MANGANESE; MULTILAYERS; SEMICONDUCTOR DOPING;

MAGNETIC MULTILAYERS;

EID: 79960168888 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3602992 Document Type: Article

Times cited : (8)

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