SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 23, 2008, Pages

Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be

(8) Chung, J H a Chung, S J a Lee, Sanghoon a Kirby, B J b Borchers, J A b Cho, Y J c Liu, X c Furdyna, J K c

a Korea University (South Korea)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

c UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; CIVIL AVIATION; ELECTRIC CONDUCTIVITY; EXCHANGE COUPLING; FERROMAGNETIC MATERIALS; FERROMAGNETISM; LANTHANUM COMPOUNDS; MAGNETIC MULTILAYERS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MULTILAYERS; SEMICONDUCTOR MATERIALS;

ANTIFERROMAGNETIC; ANTIFERROMAGNETIC INTERLAYERS; APPLIED FIELDS; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC LAYERS; FERROMAGNETIC SEMICONDUCTORS; INTERLAYER EXCHANGE COUPLINGS; POLARIZED NEUTRON REFLECTIVITIES; SATURATION FIELDS; WAVE VECTORS;

MAGNETIC MATERIALS;

EID: 57149102887 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.237202 Document Type: Article

Times cited : (55)

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