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Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1535-1537

Over 1.0 kV GaN p-n junction diodes on free-standing GaN substrates

(6) Nomoto, Kazuki a Hatakeyama, Yoshitomo a Katayose, Hideo a Kaneda, Naoki b Mishima, Tomoyoshi b Nakamura, Tohru a

a HOSEI UNIVERSITY (Japan)

b HITACHI CABLE LTD (Japan)

Author keywords

free standing GaN substrates; GaN; high breakdown voltage; p n diodes

Indexed keywords

GAN; GAN SUBSTRATE; HIGH BREAKDOWN VOLTAGE; LOW DAMAGES; LOW-DISLOCATION DENSITY; P-N DIODE; PASSIVATION FILM; PLASMA PROCESS; PN JUNCTION DIODES; SPECIFIC-ON-RESISTANCE;

DIODES; ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; PASSIVATION; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE;

EID: 79960097511 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.201000976 Document Type: Article

Times cited : (82)

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