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Solid State Communications

Volumn 151, Issue 16, 2011, Pages 1065-1070

Gate driven adiabatic quantum pumping in graphene

(3) Prada, E a San Jose, P b Schomerus, H c

a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

b INSTITUTO DE ESTRUCTURA DE LA MATERIA (Spain)

c LANCASTER UNIVERSITY (United Kingdom)

Author keywords

A. Metals; A. Thin fims; B. Nanofabrications; D. Electronic transport

Indexed keywords

A. METALS; A. THIN FIMS; BACK GATES; DIRAC POINT; DRIVING FREQUENCIES; ELECTRONIC TRANSPORT; EVANESCENT MODE; OSCILLATING VOLTAGE; PER UNIT; PROPAGATING MODE; QUANTUM PUMPING; QUANTUM PUMPS;

GRAPHENE; STEREOCHEMISTRY;

PUMPS;

EID: 79960061436 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2010.12.042 Document Type: Article

Times cited : (21)

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