An atomic-level mechanism of annealing twinning in copper observed by molecular dynamics simulation

Crystal Growth and Design

Volumn 11, Issue 7, 2011, Pages 2928-2934

  Wang, Weiguo ^a,b   Dai, Ye ^a   Li, Jiahao ^a   Liu, Baixin ^a  

^a TSINGHUA UNIVERSITY   (China)

^b SHANDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TWINS; ATOMIC ARRANGEMENT; ATOMIC LAYER; ATOMIC LEVELS; ATOMIC MOVEMENTS; ATOMIC-LEVEL MECHANISMS; DIFFERENT MECHANISMS; DRIVING FORCES; EXPERIMENTAL METHODS; MIS-ORIENTATION; MOLECULAR DYNAMICS SIMULATIONS; THERMALLY ACTIVATED PROCESS; UNDERLYING MECHANISM;

ACTIVATION ENERGY; ANNEALING; ATOMS; COPPER; DYNAMICS; GRAIN GROWTH; MOLECULAR DYNAMICS; MOLECULAR MECHANICS;

SIMULATED ANNEALING;

EID: 79960045205     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200117x     Document Type: Article

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