Polysilicon nanogap formation using size expansion technique for biosensor application

IFMBE Proceedings

Volumn 35 IFMBE, Issue , 2011, Pages 388-392

  Nazwa, T ^a   Hashim, U ^a   Dhahi, T S ^a  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

biosensor; conventional lithographic; Lateral nanogap; oxide semiconductor; Polysilicon

Indexed keywords

ACTIVE SURFACES; BIO-MOLECULAR; BIOSENSOR APPLICATIONS; CAPACITANCE TEST; CONVENTIONAL LITHOGRAPHIC; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERIZATION; NANO-GAP; NANOBIOSENSOR; NANOGAP ELECTRODES; NANOMETER LEVEL; OXIDATION TIME; OXIDE SEMICONDUCTOR; THERMAL OXIDATION;

BIOMEDICAL ENGINEERING; BIOMOLECULES; BIOSENSORS; CHARACTERIZATION; DIELECTRIC PROPERTIES; EXPANSION; FABRICATION; LITHOGRAPHY; OXIDATION; THERMAL EXPANSION;

POLYSILICON;

EID: 79960019014     PISSN: 16800737     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-642-21729-6_100     Document Type: Conference Paper

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