Effective channel length and mobility of a-IGZO TFT

Proceedings of International Meeting on Information Display

Volumn , Issue , 2010, Pages 171-172

  Im, Kiju ^a   Kim, Mu Gyeom ^a   Yang, Huiwon ^a   Park, HyeHyang ^a   Choi, Chaun Gi ^a   Mo, Yeon Gon ^a   Kim, Hye Dong ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

a IGZO; Effective channel length; TFT

Indexed keywords

A-IGZO; EFFECTIVE CHANNEL LENGTH; ELECTRON ACCUMULATION; ETCH STOP; METAL PATTERNS; SOURCE AND DRAINS; SOURCE/DRAIN EXTENSION; TFT;

GALLIUM; MANUFACTURE;

THIN FILM TRANSISTORS;

EID: 79960017834     PISSN: 17387558     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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