Effect of source/drain overlap region on device performance in a-IGZO thin-film transistors

Journal of the Society for Information Display

Volumn 17, Issue 9, 2009, Pages 735-738

  Nam, Dong Ho ^a   Choi, Kwang Il ^a   Park, Sung Soo ^a   Park, Jeong Gyu ^a   Choi, Won Ho ^a   Han, In Shik ^a   Lee, Hi Deok ^a   Jeong, Jae Kyeong ^b   Lee, Ga Won ^a  

^a Chungnam National University   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

A IGZO; Source drain offset; Source drain overlap; Thin film transistor

Indexed keywords

CHANNEL LENGTH; CONTROL PARAMETERS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES; NEGATIVE VALUES; OVERLAP LENGTH; OVERLAP REGION; S PARAMETERS; TRANSFER LENGTH METHODS;

CONTROL SYSTEM ANALYSIS; GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 72149105307     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID17.9.735     Document Type: Article

References (5)

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