Demonstration of CAM and TCAM using phase change devices

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Rajendran, Bipin ^a   Cheek, Roger W ^a   Lastras, Luis A ^a   Franceschini, Michele M ^a   Breitwisch, Matthew J ^a   Schrott, Alejandro G ^a   Li, Jing ^a   Montoye, Robert K ^a   Chang, Leland ^a   Lam, Chung ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

associative memory; chalcogenide; PCRAM

Indexed keywords

ASSOCIATIVE MEMORIES; MONTE CARLO SIMULATION; NOVEL DESIGN; PCRAM; PHASE CHANGE; PHASE-CHANGE MEMORY TECHNOLOGIES; TERNARY CAM;

ASSOCIATIVE PROCESSING; ASSOCIATIVE STORAGE; CAMS; LOGIC GATES; PHASE CHANGE MEMORY; STATIC RANDOM ACCESS STORAGE;

TERNARY CONTENT ADRESSABLE MEMORY;

EID: 79959967656     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873229     Document Type: Article

References (4)

1. K. Pagiamtzis and A. Sheikholeslami, "Content-addressable memory (CAM) circuits and architectures: a tutorial and survey", IEEE Journal of Solid-State Circuits, Vol. 41, No. 3, pp712 - 727, March 2006. (Pubitemid 43327064)
2. G. Servalli, "A 45nm generation phase change memory technology " Proceedings of IEEE International Electron Devices Meeting, 2009.
3. L. Goux, D. Castro, G. Hurkx, J. Lisoni, R. Delhougne, D. Gravesteijn, K. Attenborough and D. Wouters, "Degradation of reset switching during endurance testing of a phase-change line cell", IEEE Transactions on Electron Devices, 354-358, Feb 2009.
4. L. A. Lastras-Montano, M. M. Franceschini, B. Rajendran and C. Lam, "Coding for sensing in content addressable memories", IEEE International Symposium on Information Theory Proceedings (ISIT), 2010, pp. 1923 - 1927.