Silicon Mach-Zehnder waveguide interferometer on silicon-on-silicon (SOS) substrate incorporating the integrated three-terminal field-effect device as an optical signal modulation structure

IEICE Transactions on Electronics

Volumn E94-C, Issue 7, 2011, Pages 1173-1178

  Chuang, Ricky W ^a,b   Hsu, Mao Teng ^a   Chou, Shen Horng ^b   Lee, Yao Jen ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NDL   (Taiwan)

Author keywords

Carrier injection; Field effect transistor; Modulation depth; Modulator; Silicon; Spin on dopants (SOD); Spreading resistance probe (SRP)

Indexed keywords

FIELD EFFECT TRANSISTORS; FREQUENCY RESPONSE; LIGHT MODULATORS; MODULATORS; PHASE SHIFT; SILICON; SUBSTRATE INTEGRATED WAVEGUIDES; WAVEGUIDES;

CARRIER INJECTION; FREQUENCY RESPONSE MEASUREMENT; MACH-ZEHNDER WAVEGUIDE INTERFEROMETER; MODULATION DEPTH; OPTICAL SIGNAL MODULATION; PLASMA DISPERSION EFFECTS; SPIN-ON DOPANT; SPREADING RESISTANCE PROBES;

MODULATION;

EID: 79959959555     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E94.C.1173     Document Type: Conference Paper

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