A novel coaxial-structured amorphous-silicon p-i-n solar cell with Al-doped ZnO nanowires

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 928-930

  Li, Hung Hsien ^a   Yang, Po Yu ^a   Chiou, Si Ming ^b   Liu, Han Wen ^b   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Al doped ZnO (AZO) nanowires; amorphous silicon (a Si); coaxial structure; solar cell

Indexed keywords

A-SI LAYERS; AL-DOPED ZNO; AL-DOPED-ZNO (AZO) NANOWIRES; AMORPHOUS SILICON (A-SI); CHARGE SEPARATIONS; COAXIAL STRUCTURES; EFFICIENCY ENHANCEMENT; ELECTRICAL FIELD; HYDROTHERMALLY SYNTHESIZED; INTRINSIC LAYER THICKNESS; LOW TEMPERATURES; THIN-FILM SOLAR CELLS; WIRE LENGTH;

ALUMINUM; CONVERSION EFFICIENCY; EFFICIENCY; ELECTRIC WIRE; NANOWIRES; SILICON; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 79959801636     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2146752     Document Type: Article

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