Potential effect on the properties of CuInSe2 thin films deposited using two-electrode system

Current Applied Physics

Volumn 11, Issue 5, 2011, Pages 1173-1178

  Bouraiou, A ^a,b   Aida, M S ^a   Meglali, O ^a,c   Attaf, N ^a  

^a Universite Mentouri Constantine   (Algeria)

^b UNIVERSITY OF DJELFA   (Algeria)

^c UNIVERSITY OF M'SILA   (Algeria)

Author keywords

CuInSe2; Deposition potential; Electrochemical deposition; Photovoltaic; Thin films

Indexed keywords

ARGON ATMOSPHERES; AS-DEPOSITED FILMS; CHALCOPYRITE STRUCTURES; COATED GLASS SUBSTRATES; COPPER INDIUM DISELENIDE; CUINSE2; DEPOSITION POTENTIAL; DISLOCATION DENSITIES; ELECTROCHEMICAL DEPOSITION; INDIUM TIN OXIDE; PHOTOVOLTAIC; POTENTIAL EFFECTS; PREFERRED ORIENTATIONS; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL PARAMETER; TRANSMISSION SPECTRUMS; TWO-ELECTRODE SYSTEMS; URBACH ENERGY; XRD PATTERNS;

COPPER COMPOUNDS; CRYSTALLITE SIZE; DEPOSITION; ELECTROCHEMICAL ELECTRODES; ELECTRODEPOSITION; INDIUM; INDIUM COMPOUNDS; ITO GLASS; OPTICAL PROPERTIES; REDUCTION; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; STRUCTURAL PROPERTIES; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; VAPOR DEPOSITION; X RAY DIFFRACTION;

OXIDE FILMS;

EID: 79959801442     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.02.014     Document Type: Article

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