Improving the dielectric properties of SiC powder through nitrogen doping

Materials Science and Engineering: B

Volumn 176, Issue 12, 2011, Pages 942-944

  Li, Zhimin ^a   Zhou, Wancheng ^b   Luo, Fa ^b   Huang, Yunxia ^a   Li, Guifang ^a   Su, Xiaolei ^c  

^a XIDIAN UNIVERSITY   (China)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^c XI'AN POLYTECHNIC UNIVERSITY   (China)

Author keywords

Carbides; Combustion synthesis; Defects; Dielectric properties

Indexed keywords

COMBUSTION SYNTHESIS; DEFECTS; DOPING (ADDITIVES); PARTICLE SIZE; PERMITTIVITY;

COMPLEX PERMITTIVITY; DIELECTRICS PROPERTY; NITROGEN DOPANT; NITROGEN-DOPED; NITROGEN-DOPING; PARTICLES SIZES; SIC POWDER; SOLID NITROGEN; SYNTHESISED; Β- SIC;

SILICON CARBIDE;

EID: 79959712524     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.05.020     Document Type: Article

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