Magnetism induced by D3-symmetry tetra-vacancy defects in graphene

Chemical Physics Letters

Volumn 510, Issue 4-6, 2011, Pages 246-251

  Bao, Zhi Qiang ^a   Shi, Jun Jie ^a   Yang, Mao ^a   Zhang, Shuai ^a   Zhang, Min ^a,b  

^a PEKING UNIVERSITY   (China)

^b INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; HYDROGEN SATURATION; LATTICE DISTORTIONS; LATTICE RELAXATION; TIGHT BINDING METHODS;

DANGLING BONDS; DEFECTS; ELECTRONIC STRUCTURE; GRAPHENE; HYDROGEN BONDS; MAGNETIC PROPERTIES; MAGNETISM;

VACANCIES;

EID: 79959707960     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2011.05.056     Document Type: Article

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