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Volumn 34, Issue 1, 2011, Pages 699-704

Modeling copper chemical mechanical polishing processes using linear system method

Author keywords

[No Author keywords available]

Indexed keywords

COPPER CHEMICAL-MECHANICAL POLISHING; DOWN FORCE; EXPERIMENTAL DATA; PATTERN STRUCTURE; SIMULATION RESULT; SOLID-SOLID CONTACTS;

EID: 79959677899     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567660     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 7
    • 77649220191 scopus 로고    scopus 로고
    • An analytical Model of Contact Pressure caused by Wafer Topography in Chemical-Mechanical Polishing Process
    • submitted
    • L. Wu, "An analytical Model of Contact Pressure caused by Wafer Topography in Chemical-Mechanical Polishing Process", IEEE Transactions on Semiconductor Manufacturing (submitted)
    • IEEE Transactions on Semiconductor Manufacturing
    • Wu, L.1
  • 8
    • 77649197689 scopus 로고    scopus 로고
    • An analytical model for contact height and contact pressure in chemical mechanical polishing (CMP) for different pattern structure
    • submitted
    • L. Wu and C. Yan, "An analytical model for contact height and contact pressure in chemical mechanical polishing (CMP) for different pattern structure," IEEE Transactions on Semiconductor Manufacturing (submitted)
    • IEEE Transactions on Semiconductor Manufacturing
    • Wu, L.1    Yan, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.