Modeling copper chemical mechanical polishing processes using linear system method

ECS Transactions

Volumn 34, Issue 1, 2011, Pages 699-704

  Wu, Lixiao ^a   Yan, Changfeng ^a  

^a LANZHOU UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER CHEMICAL-MECHANICAL POLISHING; DOWN FORCE; EXPERIMENTAL DATA; PATTERN STRUCTURE; SIMULATION RESULT; SOLID-SOLID CONTACTS;

EROSION; LINEAR SYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; TEXTILE PRINTING;

CHEMICAL MECHANICAL POLISHING;

EID: 79959677899     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567660     Document Type: Conference Paper

References (8)

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3. E. Paul, F. Kaufman,V. Brusic,, J. Electrochem. Soc., 152 (4) G322-328 (2005).
4. J. lai, N. Saka, and J. Chun, J. Electrochem. Soc., 149 (1) G31-G40 (2002).
5. L. Wu and C Yan, J. Electrochem. Soc., 154, H596 (2007).
6. L. Wu, IEEE Transactions on Semiconductor Manufacturing, 20, 439 (2007).
7. L. Wu, "An analytical Model of Contact Pressure caused by Wafer Topography in Chemical-Mechanical Polishing Process", IEEE Transactions on Semiconductor Manufacturing (submitted)
8. L. Wu and C. Yan, "An analytical model for contact height and contact pressure in chemical mechanical polishing (CMP) for different pattern structure," IEEE Transactions on Semiconductor Manufacturing (submitted)