Ge- and III/V-CMP for integration of high mobility channel materials

ECS Transactions

Volumn 34, Issue 1, 2011, Pages 647-652

  Ong, P ^a   Witters, L ^a   Waldron, N ^a   Leunissen, L H A ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CRITICAL STEPS; GATE OXIDE; HIGH ELECTRON MOBILITY; HIGH MOBILITY CHANNELS; HIGH-K MATERIALS; INTEGRATION APPROACH; NMOS TRANSISTORS; PMOS TRANSISTORS; TRANSISTOR PERFORMANCE;

ELECTRON MOBILITY; GERMANIUM; HOLE MOBILITY; INTEGRATION; MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959666303     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567652     Document Type: Conference Paper

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