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Volumn 34, Issue 1, 2011, Pages 81-86

Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; DEVICE STRUCTURES; FINFET DEVICES; GATE FIRST; GATE LENGTH; HIGH DRIVE CURRENT; KEY PROCESS; SHORT CHANNELS;

EID: 79959656645     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567563     Document Type: Conference Paper
Times cited : (7)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.