Synthesis of WO3 nanorods by thermal CVD at various gas flow rates and substrate temperatures

Electrochemical and Solid-State Letters

Volumn 14, Issue 7, 2011, Pages

  Hsieh, Yun Tsung ^a   Chang, Li Wei ^a   Chang, Chen Chuan ^a   Shih, Han C ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL CONDITIONS; GROWTH PROCESS; HEATING PROCESS; HIGH YIELD; LARGE-SCALE PRODUCTION; SEMICONDUCTOR GAS SENSORS; SUBSTRATE TEMPERATURE; TEMPERATURE ZONE; THERMAL CHEMICAL VAPOR DEPOSITION; THERMAL CVD; TUNGSTEN OXIDE;

CHEMICAL SENSORS; FLOW RATE; NANORODS; PHOTOCATALYSIS; SUBSTRATES; TUNGSTEN; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITION;

EID: 79959562051     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3586784     Document Type: Article

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