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Volumn 109, Issue 9, 2011, Pages

Precision, all-optical measurement of external quantum efficiency in semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ALL-OPTICAL; BACKGROUND ABSORPTION; CRITICAL PERFORMANCE PARAMETERS; EXTERNAL QUANTUM EFFICIENCY; INDEPENDENT MEASUREMENT; LASER INDUCED; MAXIMUM EFFICIENCY; PHOTO-EXCITATIONS; PHOTOLUMINESCENCE MEASUREMENTS; SCANNING LASERS; SEMICONDUCTOR PHOTONIC DEVICES; TEMPERATURE CHANGES; TIME-RESOLVED PHOTOLUMINESCENCE;

EID: 79959521373     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3580259     Document Type: Article
Times cited : (34)

References (25)
  • 2
    • 3242725239 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.92.247403
    • M. Sheik-Bahae and R. I. Epstein, Phys. Rev. Lett. 92 (24), 247403 (2004). 10.1103/PhysRevLett.92.247403
    • (2004) Phys. Rev. Lett. , vol.92 , Issue.24 , pp. 247403
    • Sheik-Bahae, M.1    Epstein, R.I.2
  • 4
    • 0026961146 scopus 로고
    • 10.1088/0022-3727/25/12/020
    • D. J. Dunstan, J. Phys. D: Appl. Phys 25, 1825 (1992). 10.1088/0022-3727/25/12/020
    • (1992) J. Phys. D: Appl. Phys , vol.25 , pp. 1825
    • Dunstan, D.J.1
  • 23
    • 0022013444 scopus 로고
    • xas molecular beam epitaxy multiple quantum well structure
    • DOI 10.1063/1.95658
    • J. E. Fouquet and A. E. Siegman, Appl. Phys. Lett. 46, 280 (1985). 10.1063/1.95658 (Pubitemid 15474068)
    • (1985) Applied Physics Letters , vol.46 , Issue.3 , pp. 280-282
    • Fouquet, J.E.1    Siegman, A.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.