Effect of n-p-n heterostructures on interface recombination and semiconductor laser cooling

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Rupper, G ^a   Kwong, N H ^a,b   Binder, R ^a   Li, Ch Y ^c   Sheik Bahae, M ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION PROCESS; CARRIER DENSITY; COOLING CHARACTERISTICS; COOLING EFFICIENCY; DOPING CONCENTRATION; EXCITATION DENSITY; HETEROSTRUCTURES; INTERFACE RECOMBINATION; LUMINESCENCE DECAYS; MODEL ASSUMPTIONS; MODEL PARAMETERS; N-DOPING; N-P-N STRUCTURE; NON-RADIATIVE; NON-RADIATIVE LIFETIMES; NONRADIATIVE DECAYS; OPTICAL EXCITATIONS; PHOTOLUMINESCENCE CHARACTERISTICS; SEMICONDUCTOR HETEROSTRUCTURES; TEMPERATURE RANGE; TIME-DEPENDENT;

CRYSTALS; HETEROJUNCTIONS; LASER COOLING; LASER EXCITATION; LASERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

COOLING;

EID: 78751528328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517144     Document Type: Article

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