Effects of epitaxial lift-off on interface recombination and laser cooling in GaInPGaAs heterostructures

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Imangholi, Babak ^a   Hasselbeck, Michael P ^a   Sheik Bahae, Mansoor ^a   Epstein, Richard I ^a,b   Kurtz, Sarah ^c  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY LEVEL; LASER COOLING; PHOTOCARRIERS; TEMPERATURE CHANGE;

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COOLING; LASER APPLICATIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES; TEMPERATURE CONTROL; THICKNESS MEASUREMENT;

HETEROJUNCTIONS;

EID: 17044423824     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868068     Document Type: Article

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