Extending the inelastic thermal spike model for semiconductors and insulators

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 14, 2011, Pages 1646-1649

  Daraszewicz, S L ^a   Duffy, D M ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Inelastic thermal spike; Radiation damage; Silicon; Swift heavy ions

Indexed keywords

BALANCE EQUATIONS; ELECTRON PHONON COUPLINGS; ELECTRONIC STOPPING; EXPERIMENTAL DATA; IN-BAND; LATTICE TEMPERATURES; MICROSCOPIC PROCESS; NON-EQUILIBRIUM PROCESS; SPATIAL EVOLUTION; SWIFT HEAVY IONS; THERMAL SPIKE MODEL; THERMAL SPIKES; TWO TEMPERATURE MODEL;

CARRIER CONCENTRATION; ENERGY GAP; PHONONS; RADIATION DAMAGE;

IONS;

EID: 79959278493     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.11.031     Document Type: Conference Paper

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