Investigations on junction temperature estimation based on junction voltage measurements

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1506-1510

  Khatir, Z ^a   Dupont, L ^a   Ibrahim, A ^a  

^a UNIVERSITÉ GUSTAVE EIFFEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGEING TESTS; ANALYTICAL MODEL; ELECTRICAL PARAMETER; EXPERIMENTAL MEASUREMENTS; FAILURE CRITERIA; INJECTION LEVELS; JUNCTION TEMPERATURES; PHYSICAL PARAMETERS; POWER SEMICONDUCTOR DEVICES; SELF-HEATING EFFECT; TEMPERATURE DEPENDENCE; THERMAL CALIBRATION;

MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE DISTRIBUTION; TESTING;

SEMICONDUCTOR JUNCTIONS;

EID: 79959275704     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.102     Document Type: Conference Paper

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