OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient

Microelectronics Journal

Volumn 37, Issue 3, 2006, Pages 217-222

  Benda, V ^a   Cernik, M ^b   Papez, V ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b TECHNICAL UNIVERSITY OF LIBEREC   (Czech Republic)

Author keywords

Carrier lifetime gradient; OCVD method; Power diode structures

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); SEMICONDUCTOR DEVICE MANUFACTURE; WAVEFORM ANALYSIS;

CARRIER LIFETIME GRADIENT; OCVD METHOD; POWER DIODE STRUCTURES; VOLTAGE WAVEFORMS;

DIODES;

EID: 29244456423     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.09.027     Document Type: Article

References (6)

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3. Y.C. Gerstenmaier A study on the variation of carrier lifetime with temperature in bipolar silicon devices and its influence on device operation Proceedings of the ISPSD'94 1994 p. 271
4. J. Vobecky, P. Hazdra, and V. Zahlava Open circuit voltage decay lifetime of ion irradiated devices Microelectronics Journal 30 1999 513 520
5. M. Cernik, and V. Benda DIMOWIN - modelling diode reverse recovery process for education Proceedings of the ISPS'98 1998 pp. 133-136
6. P. Hazdra Blocking capability of power P-i-N diodes irradiated by hydrogen and helium ions Proceedings of the ISPS'2000 2000 pp. 57-64