A statistical analysis of the lateral displacement of Si atoms in molecular dynamics simulations of successive bombardment with 20-keV C60 projectiles

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 14, 2011, Pages 1591-1594

  Krantzman, K D ^a   Cook, E L ^a   Wucher, A ^b   Garrison, B J ^c  

^a Department of Teacher Education and Department of Sociology and Anthropology   (United States)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

C60+; Cluster ions; Molecular dynamics simulations; Si; Sputter depth profiling; Sputtering; ToF SIMS

Indexed keywords

C60+; CLUSTER IONS; MOLECULAR DYNAMICS SIMULATIONS; SPUTTER-DEPTH PROFILING; TOF SIMS;

ATOMS; COMPUTER SIMULATION; DEPTH PROFILING; DIFFUSION; PARTIAL DIFFERENTIAL EQUATIONS; SECONDARY ION MASS SPECTROMETRY; SILICON; STATISTICAL METHODS;

MOLECULAR DYNAMICS;

EID: 79959210672     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.12.078     Document Type: Conference Paper

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