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Volumn 83, Issue 3, 1998, Pages 1238-1246

Mechanisms of ion beam mixing in metals and semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001415932     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366821     Document Type: Article
Times cited : (73)

References (37)
  • 24
    • 85034468153 scopus 로고    scopus 로고
    • note
    • Because of the large volume of the liquid in gold, the 10 Å cutoff is not very meaningful in this material. Therefore, the short-range mixing in gold is not discussed in the text.
  • 31
    • 85034462799 scopus 로고    scopus 로고
    • note
    • 2 displacements. The resulting profiles did not have a Gaussian shape even after a very large number of successive displacement steps.
  • 34
    • 0038857427 scopus 로고
    • edited by N. L. Peterson and S. D. Harkness American Society for Metals, Metals Park, OH
    • K. L. Merkle, in Radiation Damage in Metals, edited by N. L. Peterson and S. D. Harkness (American Society for Metals, Metals Park, OH, 1976), p. 58.
    • (1976) Radiation Damage in Metals , pp. 58
    • Merkle, K.L.1
  • 36
    • 85034484044 scopus 로고    scopus 로고
    • note
    • Test simulations with a Pt EAM potential with a corrected melting point indicates the melting point difference may have a significant effect on the mixing results in Pt. Results of these calculations will be published later.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.