Bottom-up photonic crystal cavities formed by patterned III - V nanopillars

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2242-2246

  Scofield, Adam C ^a   Shapiro, Joshua N ^a   Lin, Andrew ^a   Williams, Alex D ^a   Wong, Ping Show ^a   Liang, Baolai L ^a   Huffaker, Diana L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

catalyst free; Nanopillar; nanowire; photonic crystal; selective area epitaxy

Indexed keywords

CATALYST-FREE; CAVITY RESONANCES; EMISSION SPECTRUMS; GAAS; GAAS SUBSTRATES; GROWTH SUBSTRATES; IN-SITU; LITHOGRAPHIC CONTROL; NANOPILLAR; NANOPILLARS; NEAR-INFRARED EMISSIONS; OPTICAL CONFINEMENT; OUT-OF-PLANE; PHOTONIC CRYSTAL CAVITIES; POLYDIMETHYLSILOXANE PDMS; RESONANT PEAKS; SELECTIVE-AREA EPITAXY; SIMULTANEOUS FORMATION;

CATALYSTS; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROCHANNELS; NANOWIRES; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PASSIVATION; RESONANCE; SILICONES; SUBSTRATES; VANADIUM;

PHOTONIC BAND GAP;

BAYSILON; DIMETICONE; GALLIUM; GALLIUM ARSENIDE; GLASS FIBER; INDIUM; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; PARTICLE SIZE; SURFACE PROPERTY;

ARSENICALS; DIMETHYLPOLYSILOXANES; GALLIUM; INDIUM; NANOSTRUCTURES; OPTICAL FIBERS; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 79958824376     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200355d     Document Type: Article

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