Quantum Hall resistance standards from a high-mobility molecular beam epitaxy system

CPEM Digest (Conference on Precision Electromagnetic Measurements)

Volumn , Issue , 2010, Pages 621-622

  Pierz, K ^a   Gotz M ^a   Pesel, E ^a   Ahlers, F J ^a   Schumacher, H W ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/GAAS; GROWTH PARAMETERS; HALL RESISTANCE; HETEROSTRUCTURES; HIGH MOBILITY; MAGNETO TRANSPORT PROPERTIES; METROLOGICAL APPLICATIONS; QUANTUM HALL RESISTANCE;

CRYSTALS; ELECTROMAGNETISM; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

HALL MOBILITY;

EID: 77956631749     PISSN: 05891485     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CPEM.2010.5544379     Document Type: Conference Paper

References (4)

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3. E. Pesel, B. Schumacher and P. Warnecke, IEEE Trans. Instrum. Meas., vol. 44, no. 2, pp. 273-275, 1995.
4. F. Delahaye and B. Jeckelmann, Metrologia, vol. 40, pp. 217-223, 2003.