Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition

Rare Metals

Volumn 30, Issue 3, 2011, Pages 247-251

  Liang, Jiran ^a,b   Hu, Ming ^a   Kan, Qiang ^b   Liang, Xiuqin ^b   Wang, Xiaodong ^b   Li, Guike ^b   Chen, Hongda ^b  

^a TIANJIN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

annealing; diffraction effect; dual ion beam sputtering; infrared transition; vanadium dioxide

Indexed keywords

AFM; CRYSTALLINE STRUCTURE; DIFFRACTION EFFECT; DIFFRACTION EFFECTS; DUAL ION BEAM SPUTTERING; FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTRUMS; INFRARED TRANSITION; LONG WAVELENGTH; PHASE TRANSITION PROPERTIES; PREFERRED ORIENTATIONS; REVERSIBLE CHANGE; SEMICONDUCTOR-METAL PHASE TRANSITION; SEMICONDUCTOR-METAL TRANSITION; SHORT WAVELENGTHS; TEMPERATURE INCREASE; VANADIUM DIOXIDE; VANADIUM DIOXIDE THIN FILMS; VANADIUM OXIDE THIN FILMS;

ANNEALING; ATOMIC SPECTROSCOPY; DIFFRACTION; FOURIER TRANSFORMS; ION BEAMS; OPACITY; OXIDE FILMS; OXIDES; PHASE TRANSITIONS; SURFACE STRUCTURE; THIN FILMS; VANADIUM ALLOYS; VANADIUM COMPOUNDS; X RAY DIFFRACTION;

VANADIUM;

EID: 79958148487     PISSN: 10010521     EISSN: 18677185     Source Type: Journal    
DOI: 10.1007/s12598-011-0376-4     Document Type: Article

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