Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited onhigh-resistivity silicon substrates

Journal of the American Ceramic Society

Volumn 94, Issue 6, 2011, Pages 1661-1663

  Ponchel, Freddy ^a   Rémiens, Denis ^b   Midy, Jean ^a   Legier, Jean Fançois ^b   Soyer, Caroline ^b   Lasri, Tuami ^b   Guegan, Guillaume ^a  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTIVITY SILICON SUBSTRATE; IN-SITU PROCESS; LOSS TANGENT; MICROWAVES FREQUENCY; RADIO FREQUENCY MAGNETRON SPUTTERING; SILICON SUBSTRATES; TIO; TUNABILITIES;

BARIUM; COPLANAR WAVEGUIDES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); RADIO WAVES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958101341     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04546.x     Document Type: Article

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