Fabrication of transition temperature controlled W-doped VO2 nano particles by aqueous solution

Journal of the Ceramic Society of Japan

Volumn 119, Issue 1390, 2011, Pages 522-524

  Miyazaki, Hidetoshi ^a   Yoshida, Kisena ^b   Sasaki, Shiori ^b   Sakamoto, Naonori ^b   Wakiya, Naoki ^b   Suzuki, Hisao ^b   Ota, Toshitaka ^c  

^a SHIMANE UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Metal insulator transition; Nanopowder; Vanadium dioxide

Indexed keywords

CHLORINE COMPOUNDS; DOPING (ADDITIVES); METAL INSULATOR BOUNDARIES; NANOPARTICLES; POWDER METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLUTIONS; TEMPERATURE; TUNGSTEN; VANADIUM;

NANO POWDERS; NANOMETER SIZE; NON-DOPED; PRIMARY PARTICLE SIZE; TUNGSTEN CHLORIDE; VANADIUM DIOXIDE;

METAL INSULATOR TRANSITION;

EID: 79958031819     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.119.522     Document Type: Article

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